page 1 NPT35015 features ? optimized for cw, pulsed, wimax, and other ap - plications from 3300 - 3800 mhz ? 18w p3db cw power ? 25w p3db peak envelope power ? 1.7w linear power @ 2% evm for single carrier ofdm, 10.3db peak/average, 10.3db @ 0.01% probability on ccdf, 10.5db gain, 18% drain effciency ? characterized for operation up to 32v ? 100% rf tested ? thermally enhanced industry standard package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to ear99 export control 3300 C 3800 mhz 18 watt, 28 volt gan hemt rf specifcations (cw): v ds = 28v, i dq = 200ma, frequency = 3500mhz, t c = 25c, measured in load pull system typical 2-tone performance: v ds = 28v, i dq = 200ma, frequency = 3500mhz, tone spacing = 1mhz, t c = 25c. measured in nitronex test fixture symbol parameter min typ max units p 3db,pep peak envelope power at 3db compression 14 18 - w p 1db,pep peak envelope power at 1db compression - 10 - w g ss small signal gain 10 11 - db h peak drain effciency at p out = p 3db 43 48 - % typical ofdm performance: v ds = 28v, i dq = 200ma, p out, avg = 1.7w, single carrier ofdm waveform 64-qam 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf. frequency = 3300 to 3800mhz. t c =25c. measured in load pull system (refer to table 1 and figure 1) symbol parameter typ units g p power gain 10.5 db h drain effciency 18 % evm error vector magnitude 2.0 % irl input return loss 10 db symbol parameter typ units p 3db average output power at 3db gain compression 18 w p 3db,pulsed pulsed output power at 3db gain compression 20 w p 1db,pulsed pulsed output power at 1db gain compression 15 w gallium nitride 28v, 18w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology NPT35015 nds-005 rev 5, april 2013
page 2 NPT35015 absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 8ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - - 4 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 8ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 200ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 60ma) - 0.45 0.50 w i d drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle, v gs = 2v) - 5.0 - a symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v p t total device power dissipation (derated above 25c) 28 w q jc thermal resistance (junction-to-case) 6.25 c/w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1a (>250v) mm machine model esd rating (per jesd22-a115) m1 (>50v) dc specifcations: t c = 25c NPT35015 nds-005 rev 5, april 2013
page 3 NPT35015 z s is the source impedance presented to the device. z l is the load impedance presented to the device. table 1: optimum source and load impedances for ofdm linearity, v ds = 28v, i dq = 200ma frequency (mhz) z s (w) z l (w) p out (w) gain (db) drain effciency (%) 3300 1 5.4 - j10.3 2.9 - j2.5 1.7 10.9 19 3400 1 5.0 - j10.7 2.9 - j2.6 1.8 11.0 22 3500 1 4.4 - j11.2 2.8 - j2.7 1.7 10.9 21 3600 1 4.0 - j12.5 2.8 - j3.3 1.7 10.9 20 3700 1 3.5 - j13.4 3.0 - j3.8 1.8 10.8 20 3800 1 3.5 - j14.6 3.2 - j4.2 1.8 10.7 20 figure 1 - optimal impedances for ofdm linearity, v ds = 28v, i dq = 200ma note 1: single carrier ofdm waveform 64-qam 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf, 2% evm. NPT35015 nds-005 rev 5, april 2013
page 4 NPT35015 load-pull data, reference plane at device leads v ds =28v, i dq =200ma, t a =25c unless otherwise noted. figure 2 - cw, pulsed cw, and pep, 3500mhz, constant impedance states figure 3 - cw power sweep, 3500mhz figure 4 - typical ofdm performance p out = 1.5w figure 5 - typical ofdm performance at 3500mhz versus i dq NPT35015 nds-005 rev 5, april 2013
page 5 NPT35015 figure 6 - typical imd3 performance, 3500mhz load-pull data, reference plane at device leads v ds =28v, i dq =200ma, t a =25c unless otherwise noted. figure 7 - power derating curve typical device characteristics v ds =28v, i dq =200ma, t a =25c unless otherwise noted. figure 8 - mttf of nrf1 devices NPT35015 nds-005 rev 5, april 2013
page 6 NPT35015 v drain rf out v gate rf in figure 9 - ad-006 demonstration board and schematic rf in rf out v gs v ds ad-006 3400-3600mhz 1.7w linear wimax application design 802.16e single carrier ofdm, 64-qam 3/4, 8-burst, 20ms frame 100% flled, 3.5mhz channel bandwidth, p ar=10.3db @ 0.01% ccdf detailed design information and data available at www.nitronex.com name value tolerance vendor vendor number c1 0.1uf 10% kemet c1206c104k1ractu c2, c7 0.01uf 10% avx 12061c103k at2a c3, c6 1000pf 10% kemet c0805c102k1ractu c5 100pf 10% kemet c0805c101k1ractu c8 1.0uf 10% panasonic ecj-5yb2a105m c4, c9, c10, c11, c14 5.6pf +/- 0.1pf atc atc600f5r6b c12 0.3pf +/- 0.1pf atc atc600f0r3b c13 0.6pf +/- 0.1pf atc atc600f0r6b c15 150uf 20% nichicon upw1c151med c16 270uf 20% united chemi-con elxy630ell271mk25s r1 10 ohm 1% panasonic erj-2rkf10r0x r2 0.33 ohm 1% panasonic erj-6rqfr33v pa1 -- -- -- NPT35015d substrate rogers r04350, t = 30mil e r = 3.5 table 2: ad-006 demonstration board bill of materials c12 0.3pf r1 10 NPT35015 595mils 240mils 40mils 600mils c10 5.6pf c9 5.6pf r2 0.33 c16 270uf + c7 0.01uf c6 1000pf c8 1.0uf v ds 68mils 240mils rf out c3 0.6pf c14 5.6pf 35mils 520mils v gs rf in c3 1000pf c2 0.01uf c1 0.1uf c15 150uf c11 5.6pf 68mils 40mils 80mils 340mils 90mils 430mils 490mils 175mils c5 100pf + c4 5.6pf NPT35015 nds-005 rev 5, april 2013
page 7 NPT35015 figure 10 - gain, effciency, evm at 3400mhz figure 11 - gain, effciency, evm at 3500mhz ad-006 3400-3600mhz 1.7w linear wimax application design 802.16e single carrier ofdm, 64-qam 3/4, 8-burst, 20ms frame 100% flled, 3.5mhz channel bandwidth, p ar=10.3db @ 0.01% ccdf detailed design information and data available at www.nitronex.com 0 5 10 15 20 25 30 35 40 45 50 15 20 25 30 35 40 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 evm (%) gain (db) efficiency (%) evm (%) 0 5 10 15 20 25 30 35 40 45 50 15 20 25 30 35 40 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 evm (%) gain (db) efficiency (%) evm (%) 0 5 10 15 20 25 30 35 40 45 50 15 20 25 30 35 40 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 evm (%) gain (db) efficiency (%) evm (%) figure 12 - gain, effciency, evm at 3600mhz NPT35015 nds-005 rev 5, april 2013
page 8 NPT35015 figure 13 - etsi mask compliance in nitronex demonstration board at 3500mhz and p out = 1.5w -14 -24 -34 -44 -54 -64 -74 -84 -94 3489.50 mhz 1 . 7 5 mhz / div 351 0.50 m hz marker 1 -30.51 dbm 3.5 ghz 1 figure 14 - typic al s 11 and s 21 ad-006 3400-3600mhz 1.7w linear wimax application design 802.16e single carrier ofdm, 64-qam 3/4, 8-burst, 20ms frame 100% flled, 3.5mhz channel bandwidth, p ar=10.3db @ 0.01% ccdf detailed design information and data available at www.nitronex.com NPT35015 nds-005 rev 5, april 2013
page 9 NPT35015 ordering information part number order multiple description NPT35015dt 97 tube; NPT35015 in d (psop2) package NPT35015dr 1500 tape and reel; NPT35015 in d (psop2) package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com inches millimeters dim min max min max a 0.18 9 0.19 6 4.80 4.98 b 0.15 0 0.157 3.81 3.99 c 0.107 0.123 2.72 3.12 d 0.071 0.870 1.80 2 2.1 e 0.230 0.244 5.84 6.19 f 0.050 bsc 1.270 bsc f 0.0138 0.0192 0.35 0.49 g 0.055 0.061 1.40 1.55 g1 0.000 0.004 0.00 0.10 h 0.075 0.098 1.91 2.50 l 0.016 0.035 0.41 0.89 m 0 8 0 8 figure 15 - d package dimensions and pinout figure 16 - mounting footprint 1 2 3 4 8 6 5 7 9 cha m f er 1. n c 2 . g a t e 3 . g a t e 4. n c 7. d r ain 6 . drain 5 . nc 8. n c 9 . sou r c e pa d ( b o t t om) e b d c a f (6x) f (8x) g 1 s e a t ing p lan e g m s e a ting p l a n e l h a/2 d / 2 .150 solder paste .080" x .120" (typ) solder paste .020" x .040" (8x typ) .100 .105 .176 .145 .140 heat sink pedestal pwb cutout r.016 (4x typ) .055 .180 .030 pwb pad (8x typ) solder mask .005" relief (typ) 1. gate 2. gate 3. gate 4. gate 5. drain 6. drain 7. drain 8. drain 9. source pad (bottom) NPT35015 nds-005 rev 5, april 2013
page 10 NPT35015 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. NPT35015 nds-005 rev 5, april 2013
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